EN25S10A Datasheet, PDF (24/64 Pages) Eon Silicon Solution Inc. – 1 Megabit 1.8V Serial Flash Memory with 4Kbyte Uniform Sector

EN25S10A
Dual Output Fast Read (3Bh)
The Dual Output Fast Read (3Bh) is similar to the standard Fast Read (0Bh) instruction except that
data is output on two pins, DQ₀ and DQ₁, instead of just DQ₀. This allows data to be transferred from
the EN25S10A at twice the rate of standard SPI devices. The Dual Output Fast Read instruction is ideal
for quickly downloading code from to RAM upon power-up or for applications that cache code-
segments to RAM for execution.
Similar to the Fast Read instruction, the Dual Output Fast Read instructions can operation at the
highest possible frequency of FR (see AC Electrical Characteristics). This is accomplished by adding
eight “dummy clocks after the 24-bit address as shown in figure 15. The dummy clocks allow the
device’s internal circuits additional time for setting up the initial address. The input data during the
dummy clock is “don’t care”. However, the DI pin should be high-impedance prior to the falling edge of
the first data out clock.
Figure 15. Dual Output Fast Read Instruction Sequence Diagram
This Data Sheet may be revised by subsequent versions
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or modifications due to changes in technical specifications.
©2014 Eon Silicon Solution, Inc.,
Rev. A, Issue Date: 2014/01/20
www.eonssi.com