EN25T16A Datasheet, PDF (1/35 Pages) Eon Silicon Solution Inc. – 16 Megabit Uniform Sector, Serial Flash Memory

EN25T16A
16 Megabit Uniform Sector, Serial Flash Memory
with Dual Data Mode
EN25T16A
FEATURES
• Single power supply operation
- Full voltage range: 2.7-3.6 volt
• Serial Interface Architecture
- SPI Compatible: Mode 0 and Mode 3
• 16 Mbit Serial Flash
- 16 M-bit/2048 K-byte/8192 pages
- 256 bytes per programmable page
• High performance
- 75MHz clock rate
- dual data mode
• Low power consumption
- 12 mA typical active current
- 1 μA typical power down current
• Uniform Sector Architecture:
- 512 sectors of 4-Kbyte
- 32 blocks of 64-Kbyte
- Any sector or block can be
erased individually
• Software and Hardware Write Protection:
- Write Protect all or portion of memory via
software
- Enable/Disable protection with WP# pin
• High performance program/erase speed
- Page program time: 1.3ms typical
- Sector erase time: 60ms typical
- Block erase time 400ms typical
- Chip erase time: 7 seconds typical
• Lockable 512 byte OTP security sector
• Minimum 100K endurance cycle
• Package Options
- 8 pins SOP 200mil body width
- 8 pins PDIP
- 8 contact VDFN
• Industrial temperature Range
GENERAL DESCRIPTION
The EN25T16A is a 16M-bit (2048K-byte) Serial Flash memory, with advanced write protection
mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to
256 bytes at a time, using the Page Program instruction.
The EN25T16A is designed to allow either single Sector/Block at a time or full chip erase operation. The
EN25T16A can be configured to protect part of the memory as the software protected mode. The device can
sustain a minimum of 100K program/erase cycles on each sector or block.
This Data Sheet may be revised by subsequent versions
1
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc.,
Rev. C, Issue Date: 2011/04/15
www.eonssi.com