HB52RF649DC Datasheet, PDF (9/16 Pages) Elpida Memory – 512MB Unbuffered SDRAM S.O.DIMM

HB52RF649DC-B, HB52RD649DC-B
DC Characteristics 1 (TA = 0 to 65°C, VCC = 3.3V ± 0.3V, VSS = 0V)
Parameter
Symbol Grade
Max.
Unit
Test conditions
Notes
Operating current
(CL = 2)
(CL = 3)
Standby current in power down
Standby current in power down
(input signal stable)
Standby current in non power down
ICC1
-75
-A6
ICC1
-75
-A6
ICC2P
ICC2PS
ICC2N
Active standby current in power down ICC3P
Active standby current in non power
down
Burst operating current
(CL = 2)
(CL = 3)
ICC3N
ICC4
-75
-A6
ICC4
-75
-A6
1260
1125
1260
1125
54
36
360
72
540
1170
1170
1485
1170
mA
Burst length = 1
tRC = min.
1, 2, 3
mA
mA
CKE0 = VIL,
tCK = 12ns
6
mA
CKE0 = VIL, tCK = ∞ 7
mA
CKE0, /S = VIH,
tCK = 12ns
mA
CKE0, /S = VIH,
tCK = 12ns
mA
CKE0, /S = VIH,
tCK = 12ns
4
1, 2, 6
1, 2, 4
mA
tCK = min., BL = 4 1, 2, 5
mA
Refresh current
ICC5
2250
mA
tRC = min.
3
Self refresh current
Self refresh current
(L-version)
ICC6
ICC6
54
mA
VIH ≥ VCC – 0.2V
VIL ≤ 0.2V
8
36
mA
Notes: 1. ICC depends on output load condition when the device is selected. ICC (max.) is specified at the output
open condition.
2. One bank operation.
3. Input signals are changed once per one clock.
4. Input signals are changed once per two clocks.
5. Input signals are changed once per four clocks.
6. After power down mode, CK0/CK1 operating current.
7. After power down mode, no CK0/CK1 operating current.
8. After self refresh mode set, self refresh current.
DC Characteristics 2 (TA = 0 to 65°C, VCC = 3.3V ± 0.3V, VSS = 0V)
Parameter
Input leakage current
Output leakage current
Output high voltage
Output low voltage
Symbol Grade min.
ILI
–10
ILO
–10
VOH
2.4
VOL
—
Max.
10
10
—
0.4
Unit
Test conditions
Notes
µA
0 ≤ Vin ≤ VCC
µA
0 ≤ Vout ≤ VCC
DQ = disable
V
IOH = –4 mA
V
IOL = 4 mA
Data Sheet E0223H30 (Ver. 3.0)
9