HB52RF649DC Datasheet, PDF (8/16 Pages) Elpida Memory – 512MB Unbuffered SDRAM S.O.DIMM

HB52RF649DC-B, HB52RD649DC-B
Electrical Specifications
Absolute Maximum Ratings
Parameter
Voltage on any pin relative to VSS
Supply voltage relative to VSS
Short circuit output current
Power dissipation
Operating temperature
Storage temperature
Note: 1. Respect to VSS.
Symbol
VT
VCC
IOUT
PT
Topr
Tstg
Value
Unit
Note
–0.5 to VCC + 0.5
(≤ 4.6 (max.))
V
1
–0.5 to +4.6
V
1
50
mA
9.0
W
0 to +65
°C
–55 to +125
°C
DC Operating Conditions (TA = 0 to +65°C)
Parameter
Symbol
min.
max.
Unit
Note
Supply voltage
VCC
3.0
3.6
V
1, 2
VSS
0
0
V
3
Input high voltage
VIH
2.0
VCC + 0.3 V
1, 4
Input low voltage
VIL
–0.3
0.8
V
1, 5
Ambient illuminance
—
—
100
lx
Notes: 1. All voltage referred to VSS.
2. The supply voltage with all VCC pins must be on the same level.
3. The supply voltage with all VSS pins must be on the same level.
4. VIH (max.) = VCC + 2.0V for pulse width ≤ 3ns at VCC.
5. VIL (min.) = VSS – 2.0V for pulse width ≤ 3ns at VSS.
Data Sheet E0223H30 (Ver. 3.0)
8