HB52RF649DC Datasheet, PDF (10/16 Pages) Elpida Memory – 512MB Unbuffered SDRAM S.O.DIMM

HB52RF649DC-B, HB52RD649DC-B
Pin Capacitance (TA = 25°C, VCC = 3.3V ± 0.3V)
Parameter
Symbol
Pins
max.
Unit
Notes
Input capacitance
CIN
Address
110
pF
1, 2, 4
Input capacitance
CIN
/RE, /CE, /W,
110
pF
1, 2, 4
Input capacitance
CIN
/S0, /S1, CK0, CK1,
CKE0, CKE1
65
pF
1, 2, 4
Input capacitance
CIN
DQMB
30
pF
1, 2, 4
Input/Output capacitance
CI/O
DQ, CB
27
pF
1, 2, 3, 4
Notes: 1. Capacitance measured with Boonton Meter or effective capacitance measuring method.
2. Measurement condition: f = 1MHz, 1.4V bias, 200mV swing.
3. DQMB = VIH to disable Data-out.
4. This parameter is sampled and not 100% tested.
AC Characteristics (TA = 0 to 65°C, VCC = 3.3V ± 0.3V, VSS = 0V)
-75
Parameter
System clock cycle time
(CL = 2)
(CL = 3)
PC100
Symbol Symbol min.
tCK
Tclk
10
tCK
Tclk
7.5
CK high pulse width
tCKH Tch
2.5
CK low pulse width
Access time from CK
(CL = 2)
(CL = 3)
tCKL
Tcl
2.5
tAC
Tac
—
tAC
Tac
—
Data-out hold time
tOH
Toh
2.7
CK to Data-out low impedance tLZ
2
CK to Data-out high impedance tHZ
—
Input setup time
tAS,
tDS,
tCS,
tCES
Tsi
1.5
CKE setup time for power down
exit
tCESP
Tpde
1.5
tAH, tCH,
Input hold time
tDH,
Thi
0.8
tCEH
Ref/Active to Ref/Active
command period
tRC
Trc
67.5
Active to Precharge command
period
tRAS
Tras
45
Active command to column
command (same bank)
tRCD Trcd
20
Precharge to active command
period
tRP
Trp
20
Write recovery or data-in to
precharge lead time
tDPL
Tdpl
15
Active (a) to Active (b)
command period
tRRD Trrd
15
Transition time (rise and fall) tT
1
Refresh period
tREF
—
-A6
max. min.
—
10
—
10
—
3
—
3
6
—
5.4
—
—
3
—
2
5.4
—
—
2
—
2
—
1
—
70
120000 50
—
20
—
20
—
20
—
20
5
1
64
—
max.
Unit
—
ns
—
ns
—
ns
—
ns
6
ns
6
ns
—
ns
—
ns
6
ns
—
ns
—
ns
—
ns
—
ns
120000 ns
—
ns
—
ns
—
ns
—
ns
5
ns
64
ms
Notes
1
1
1
1, 2
1, 2
1, 2, 3
1, 4
1, 5
1
1
1
1
1
1
1
1
Data Sheet E0223H30 (Ver. 3.0)
10