HB54R1G9F2U Datasheet, PDF (12/16 Pages) Elpida Memory – 1GB Registered DDR SDRAM DIMM

HB54R1G9F2U-A75B/B75B/10B
DC Characteristics 1 (TA = 0 to 55°C, VCC, VCCQ = 2.5V ± 0.2V, VSS = 0V)
Parameter
Symbol Grade
max.
Unit Test condition
Notes
Operating current (ACTV-PRE) ICC0
Operating current (ACTV-READ-
PRE)
ICC1
Idle power down standby current ICC2P
Idle standby current
Active power down standby
current
Active standby current
Operating current
(Burst read operation)
Operating current
(Burst write operation)
Auto refresh current
ICC2N
ICC3P
ICC3N
ICC4R
ICC4W
ICC5
Self refresh current
ICC6
-A75B
-B75B
-10B
-A75B
-B75B
-10B
-A75B
-B75B
-10B
-A75B
-B75B
-10B
-A75B
-B75B
-10B
-A75B
-B75B
-10B
-A75B
-B75B
-10B
-A75B
-B75B
-10B
-A75B
-B75B
-10B
-A75B
-B75B
-10B
3117
2928
2559
4107
3828
3459
1065
948
831
1857
1668
1479
1317
1128
939
2217
2028
1839
5367
5088
4809
5007
4728
4449
5007
4818
4359
525
516
507
mA CKE ≥ VIH, tRC = min. 1, 2, 5
mA
CKE ≥ VIH, BL = 2,
CL = 3.5, tRC = min.
1, 2, 5
mA CKE ≤ VIL
4
mA CKE ≥ VIH, /CS ≥ VIH 4
mA CKE ≤ VIL
3
mA
CKE ≥ VIH, /CS ≥ VIH
tRAS = max.
3
mA
CKE ≥ VIH, BL = 2,
CL = 3.5
1, 2, 5, 6
mA
CKE ≥ VIH, BL = 2,
CL = 3.5
1, 2, 5, 6
mA
tRFC = min.,
Input ≤ VIL or ≥ VIH
mA
Input ≥ VCC – 0.2V
Input ≤ 0.2V.
Notes. 1. These ICC data are measured under condition that DQ pins are not connected.
2. One bank operation.
3. One bank active.
4. All banks idle.
5. Command/Address transition once per one cycle.
6. Data/Data mask transition twice per one cycle.
7. The ICC data on this table are measured with regard to tCK = min. in general.
DC Characteristics 2 (TA = 0 to 55°C, VCC, VCCQ = 2.5V ± 0.2V, VSS = 0V)
Parameter
Input leakage current
Output leakage current
Output high voltage
Output low voltage
Symbol
ILI
ILO
VOH
VOL
min.
max.
Unit
–10
10
µA
–10
10
µA
VTT + 0.76 —
V
—
VTT – 0.76 V
Test condition
VCC ≥ VIN ≥ VSS
VCC ≥ VOUT ≥ VSS
IOH (max.) = –15.2mA
IOL (min.) = 15.2mA
Notes
Data Sheet E0192H30 (Ver. 3.0)
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