HB54R1G9F2U Datasheet, PDF (11/16 Pages) Elpida Memory – 1GB Registered DDR SDRAM DIMM

HB54R1G9F2U-A75B/B75B/10B
Electrical Specifications
Absolute Maximum Ratings
Parameter
Voltage on any pin relative to VSS
Supply voltage relative to VSS
Short circuit output current
Power dissipation
Operating temperature
Storage temperature
Notes: 1. Respect to VSS.
Symbol
VT
VCC, VCCQ
IOUT
PT
Topr
Tstg
Value
–1.0 to +4.6
–1.0 to +4.6
50
18
0 to +55
–50 to +100
Unit
Note
V
1
V
1
mA
W
°C
°C
DC Operating Conditions (TA = 0 to +55°C)
Parameter
Symbol
min.
Typ
max.
Unit Notes
Supply voltage
VCC, VCCQ 2.3
2.5
2.7
V
1, 2
VSS
0
0
0
V
Input reference voltage
VREF
1.15
1.25
1.35
V
1
Termination voltage
VTT
VREF – 0.04 VREF
VREF + 0.04 V
1
DC Input high voltage
VIH
VREF + 0.18 —
VCCQ + 0.3 V
1, 3
DC Input low voltage
VIL
–0.3
—
VREF – 0.18 V
1, 4
DC Input signal voltage
VIN (dc)
–0.3
—
VCCQ + 0.3 V
5
DC differential input voltage
Ambient illuminance
VSWING (dc) 0.36
—
VCCQ + 0.6 V
6
—
—
—
100
lx
Notes: 1. All parameters are referred to VSS, when measured.
2. VCCQ must be lower than or equal to VCC.
3. VIH is allowed to exceed VCC up to 4.6V for the period shorter than or equal to 5ns.
4. VIL is allowed to outreach below VSS down to –1.0V for the period shorter than or equal to 5ns.
5. VIN (dc) specifies the allowable dc execution of each differential input.
6. VSWING (dc) specifies the input differential voltage required for switching.
Data Sheet E0192H30 (Ver. 3.0)
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