HB54A2569F1U Datasheet, PDF (12/17 Pages) Elpida Memory – 256MB, 512MB Registered DDR SDRAM DIMM

HB54A2569F1U, HB54A5129F2U
Detailed Operation Part, AC Characteristics and Timing Waveforms
Refer to the HM5425161B/HM5425801B/HM5425401B Series datasheet (E0086H10). DIMM /CAS latency = Device
CL + 1 for registered type.
Electrical Specifications
Absolute Maximum Ratings
Parameter
Voltage on any pin relative to VSS
Supply voltage relative to VSS
Short circuit output current
EPower dissipation
Operating temperature
Storage temperature
ONotes: 1. Respect to VSS.
Symbol
VT
VCC, VCCQ
IOUT
PT
Topr
Tstg
DC Operating Conditions (TA = 0 to +55°C)
Parameter
L ^{Supply voltage}
Symbol
VCC, VCCQ
Value
–1.0 to +4.6
–1.0 to +4.6
50
9
0 to +55
–50 to +100
min.
Typ
2.3
2.5
Unit
Note
V
1
V
1
mA
W
°C
°C
max.
2.7
Unit Notes
V
1, 2
VSS
0
0
0
V
Input reference voltage
VREF
1.15
1.25
1.35
V
1
Termination voltage
VTT
VREF – 0.04 VREF
VREF + 0.04 V
1
DC Input high voltage
VIH
VREF + 0.18 —
VCCQ + 0.3 V
1, 3
DC Input low voltage
VIL
–0.3
—
VREF – 0.18 V
1, 4
P _{DC Input signal voltage}
VIN (dc)
–0.3
—
VCCQ + 0.3 V
5
DC differential input voltage
VSWING (dc) 0.36
—
VCCQ + 0.6 V
6
Notes: 1. All parameters are referred to VSS, when measured.
r 2. VCCQ must be lower than or equal to VCC.
3. VIH is allowed to exceed VCC up to 4.6V for the period shorter than or equal to 5ns.
4. VIL is allowed to outreach below VSS down to –1.0V for the period shorter than or equal to 5ns.
o _{5. VIN (dc) specifies the allowable dc execution of each differential input.}
duct ^{6. VSWING (dc) specifies the input differential voltage required for switching.}
Data Sheet E0206H30 (Ver. 3.0)
12