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HB54A2569F1U Datasheet, PDF (1/17 Pages) Elpida Memory – 256MB, 512MB Registered DDR SDRAM DIMM
DATA SHEET
256MB, 512MB Registered DDR SDRAM DIMM
HHBB5544AA52152699FF21UU((6342MMwwoorrddss××7722bbititss,,21BBaannkks)) Description
The HB54A2569F1U, HB54A5129F2U are Double
Data Rate (DDR) SDRAM Module, mounted 256M bits
EDDR SDRAM (HM5425801BTT) sealed in TSOP
package, and 1 piece of serial EEPROM (2k bits
EEPROM) for Presence Detect (PD).
The HB54A2569F1U is organized as 32M × 72 × 1
Obank mounted 9 pieces of 256M bits DDR SDRAM.
The HB54A5129F2U is organized as 32M × 72 × 2
banks mounted 18 pieces of 256M bits DDR SDRAM.
Read and write operations are performed at the cross
points of the CK and the /CK. This high-speed data
transfer is realized by the 2 bits prefetch-pipelined
L architecture. Data strobe (DQS) both for read and
write are available for high speed and reliable data bus
design. By setting extended mode register, the on-chip
Delay Locked Loop (DLL) can be set enable or disable.
An outline of the products is 184-pin socket type
package (dual lead out). Therefore, it makes high
P density mounting possible without surface mount
technology. It provides common data inputs and
outputs. Decoupling capacitors are mounted beside
roduct each TSOP on the module board.
Features
• 184-pin socket type package (dual lead out)
 Outline: 133.35mm (Length) × 30.48mm (Height) ×
4.00mm (Thickness)
 Lead pitch: 1.27mm
• 2.5V power supply (VCC/VCCQ)
• SSTL-2 interface for all inputs and outputs
• Clock frequency: 143MHz/133MHz/125MHz (max.)
• Data inputs, outputs and DM are synchronized with
DQS
• 4 banks can operate simultaneously and
independently (Component)
• Burst read/write operation
• Programmable burst length: 2, 4, 8
 Burst read stop capability
• Programmable burst sequence
 Sequential
 Interleave
• Start addressing capability
 Even and Odd
• Programmable /CAS latency (CL): 3, 3.5
• 8192 refresh cycles: 7.8µs (8192/64ms)
• 2 variations of refresh
 Auto refresh
 Self refresh
Document No. E0206H30 (Ver. 3.0) This product became EOL in May, 2004.
Date Published September 2002 (K) Japan
URL: http://www.elpida.com
Elpida Memory, Inc. 2001-2002
Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.