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EDJ1104BASE Datasheet, PDF (1/148 Pages) Elpida Memory – 1G bits DDR3 SDRAM | |||
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DATA SHEET
1G bits DDR3 SDRAM
EDJ1104BASE (256M words à 4 bits)
EDJ1108BASE (128M words à 8 bits)
EDJ1116BASE (64M words à 16 bits)
Specifications
Features
⢠Density: 1G bits
⢠Organization
 32M words à 4 bits à 8 banks (EDJ1104BASE)
 16M words à 8 bits à 8 banks (EDJ1108BASE)
 8M words à 16 bits à 8 banks (EDJ1116BASE)
⢠Package
 78-ball FBGA (EDJ1104/1108BASE)
 96-ball FBGA (EDJ1116BASE)
 Lead-free (RoHS compliant)
⢠Power supply: VDD, VDDQ = 1.5V ± 0.075V
⢠Data rate
 1600Mbps/1333Mbps/1066Mbps/800Mbps (max.)
⢠1KB page size (EDJ1104/1108BASE)
 Row address: A0 to A13
 Column address: A0 to A9, A11 (EDJ1104BASE)
A0 to A9 (EDJ1108BASE)
⢠2KB page size (EDJ1116BASE)
 Row address: A0 to A12
 Column address: A0 to A9
⢠Eight internal banks for concurrent operation
⢠Interface: SSTL_15
⢠Burst lengths (BL): 8 and 4 with Burst Chop (BC)
⢠Burst type (BT):
 Sequential (8, 4 with BC)
 Interleave (8, 4 with BC)
⢠/CAS Latency (CL): 5, 6, 7, 8, 9, 10, 11
⢠/CAS Write Latency (CWL): 5, 6, 7, 8
⢠Precharge: auto precharge option for each burst
access
⢠Driver strength: RZQ/7, RZQ/6 (RZQ = 240â¦)
⢠Refresh: auto-refresh, self-refresh
⢠Refresh cycles
 Average refresh period
7.8µs at 0°C ⤠TC ⤠+85°C
3.9µs at +85°C < TC ⤠+95°C
⢠Operating case temperature range
 TC = 0°C to +95°C
⢠Double-data-rate architecture; two data transfers per
clock cycle
⢠The high-speed data transfer is realized by the 8 bits
prefetch pipelined architecture
⢠Bi-directional differential data strobe (DQS and /DQS)
is transmitted/received with data for capturing data at
the receiver
⢠DQS is edge-aligned with data for READs; center-
aligned with data for WRITEs
⢠Differential clock inputs (CK and /CK)
⢠DLL aligns DQ and DQS transitions with CK
transitions
⢠Commands entered on each positive CK edge; data
and data mask referenced to both edges of DQS
⢠Data mask (DM) for write data
⢠Posted /CAS by programmable additive latency for
better command and data bus efficiency
⢠On-Die Termination (ODT) for better signal quality
 Synchronous ODT
 Dynamic ODT
 Asynchronous ODT
⢠Multi Purpose Register (MPR) for temperature read
out
⢠ZQ calibration for DQ drive and ODT
⢠Programmable Partial Array Self-Refresh (PASR)
⢠/RESET pin for Power-up sequence and reset
function
⢠SRT range:
 Normal/extended
 Auto/manual self-refresh
⢠Programmable Output driver impedance control
Document No. E1128E60 (Ver. 6.0)
Date Published April 2009 (K) Japan
Printed in Japan
URL: http://www.elpida.com
Elpida Memory, Inc. 2007-2009
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