GD25D05B Datasheet, PDF (12/28 Pages) ELM Electronics – 512K-bit Serial Flash

GD25D05BxIGx Uniform sector dual and quad serial flash
7.5. Read Data Bytes (READ) (03H)
http://www.elm-tech.com
The Read Data Bytes (READ) command is followed by a 3-byte address (A23-A0), each bit being latched-
in on the rising edge of SCLK. Then the memory content, at that address, is shifted out on SO, each bit being
shifted out, at a Max frequency fR, on the falling edge of SCLK. The first byte addressed can be at any location.
The address is automatically incremented to the next higher address after each byte of data is shifted out. The
whole memory can, therefore, be read with a single Read Data Bytes (READ) command. Any Read Data Bytes
(READ) command, while an Erase, Program or Write cycle is in progress, is rejected without having any effects
on the cycle that is in progress.
Figure 5. Read Data Bytes Sequence Diagram
7.6. Read Data Bytes at Higher Speed (Fast Read) (0BH)
The Read Data Bytes at Higher Speed (Fast Read) command is for quickly reading data out. It is followed by
a 3-byte address (A23-A0) and a dummy byte, each bit being latched-in on the rising edge of SCLK. Then the
memory content, at that address, is shifted out on SO, each bit being shifted out, at a Max frequency fC, on the
falling edge of SCLK. The first byte addressed can be at any location. The address is automatically incremented
to the next higher address after each byte of data is shifted out.
Figure 6. Read Data Bytes at Higher Speed Sequence Diagram
28 - 12
Rev.1.0