DG408BP45_15 Datasheet, PDF (9/19 Pages) Dynex Semiconductor – Gate Turn-off Thyristor

DG408BP45
5.0
t_r
4.0
Conditions: T_j = 125°C, I_FGM = 30A,
C_S = 1.0µF, V_D = 3000V,
3.0
R_S = 10 Ohms, dI_T/dt = 300A/µs
2.0
1.0
0
t_d
250
500
750
1000
1250
On-state current I_T - (A)
Fig.13 Delay time & rise time vs turn-on current
8.0
Conditions:
7.0
T_j = 125°C, I_T = 1000A,
C_S = 1.0µF,
R_S = 10 Ohms,
6.0
dI/dt = 300A/µs,
dI_FG/dt = 30A/µs,
5.0
V_D = 3000V
4.0
t_r
3.0
2.0
t_d
1.0
0
0
20
40
60
80
Peak forward gate current I_FGM - (A)
Fig.14 Delay time & rise time vs peak forward gate current
1500
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