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DG408BP45_15 Datasheet, PDF (8/19 Pages) Dynex Semiconductor – Gate Turn-off Thyristor
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DG408BP45
2500
Conditions:
Tj = 125°C, IFGM = 30A,
CS = 1.0µF,
RS = 10 Ohms,
2000 dIT/dt = 300A/µs
dIFG/dt = 30A/µs
1500
VD = 3000V
VD = 2000V
1000
500
VD = 1000V
0
0
2750
2500
2250
2000
1750
250
500
750
1000
1250
On-state current IT - (A)
Fig.10 Turn-on energy vs on-state current
1500
Conditions: Tj = 125°C,
IT = 1000A, CS = 1.0µF,
RS = 10 Ohms,
dI/dt = 300A/µs,
dIFG/dt = 30A/µs
VD = 3000V
4000
Conditions:
3500
IT = 1000A,
Tj = 125°C,
CS = 1.0µF
3000 RS = 10 Ohms
IFGM = 30A,
2500 dIFG/dt = 30A/µs
2000
VD = 3000V
1500
1250
VD = 2000V
1500
1000
VD = 2000V
1000
VD = 1000V
7500
20
40
60
80
Peak forward gate current IFGM - (A)
Fig.11 Turn-on energy vs peak forward gate current
500
VD = 1000V
0
0
100
200
300
Rate of rise of on-state current dIT/dt - (A/µs)
Fig.12 Turn-on energy vs rate of rise of on-state current
8/19
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