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| DG408BP45_15 Datasheet, PDF (7/19 Pages) Dynex Semiconductor – Gate Turn-off Thyristor | |||
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DG408BP45
2250
2000
1750
Conditions:
Tj = 25°C, IFGM = 30A,
CS = 1.0µF,
dI/dt = 300A/µs,
dIFG/dt = 30A/µs
1500
VD = 3000V
VD = 2000V
1250
1000
750
VD = 1000V
500
250
0
0
250
500
750
1000
1250
On-state current IT - (A)
Fig.8 Turn-on energy vs on-state current
2750
2500
2250
2000
1750
Conditions:
Tj = 25°C, IT = 1000A,
CS = 1.0µF, RS = 10 Ohms
dI/dt = 300A/µs,
dIFG/dt = 30A/µs
VD = 3000V
1500
1250
VD = 2000V
1000
750
500
0
VD = 1000V
20
40
60
80
Peak forward gate current IFGM - (A)
Fig.9 Turn-on energy vs peak forward gate current
1500
7/19
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