DG408BP45_15 Datasheet, PDF (4/19 Pages) Dynex Semiconductor – Gate Turn-off Thyristor

DG408BP45
CURVES
2.0
4.0
1.5
3.0
1.0
2.0
V_GT
0.5
1.0
I_GT
0
0
-50 -25 0 25 50 75 100 125 150
Junction temperature T_j - (°C)
Fig.1 Maximum gate trigger voltage/current vs junction temperature
2.0
Measured under pulse conditions.
I_G(ON) = 4.0A
1.5
Half sine wave 10ms
1.5
T_j = 25°C
1.0
1.0
T_j = 125°C
0.5
0
1.0
2.0
3.0
4.0
5.0
Instantaneous on-state voltage V_TM - (V)
Fig.2 On-state characteristics
0.5
0
0.25
Conditions:
T_j = 125°C, V_DM = V_DRM,
dI_GQ/dt = 30A/µs
0.50 0.75 1.00 1.25 1.5 1.75 2.0
Snubber capacitance C_S - (µF)
Fig.3 Maximum dependence of I_TCM on C_S
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