GP1600FSS12 Datasheet, PDF (8/11 Pages) Dynex Semiconductor – Powerline N-Channel Single Switch IGBT Module Advance Information

GP1600FSS12
3200
2800
2400
2000
T_j = 25˚C
T_j = 125˚C
1600
1200
800
400
0
0
0.5
1
1.5
2
2.5
3
3.5
Forward voltage, V_F - (V)
Fig.13 Diode typical forward characteristics
3600
3400
3200
3000
2800
2600
2400
2200
2000
1800
1600
1400
1200
1000
800
600
400
Conditions:
V_GE = ±15V
R_g = 3.3Ω
200 T_case = 125˚C
0
0
200
400
600
800 1000
Collector-emitter voltage, V_CE - (V)
1200
Fig.14 Reverse bias safe operating area
10000
100
I_C max. (single pulse)
1000
100
I_{C max. DC}
(continuous)
50µs
100µs
t_p = 1ms
10
1
10
Diode
Transistor
1
0.1
1
10
100
1000
10000
0.001
0.01
0.1
1
10
Collector-emitter voltage, V_ce - (V)
Pulse width, t_p - (s)
Fig.15 Forward bias safe operating area
Fig.16 Transient thermal impedance
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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