GP1600FSS12 Datasheet, PDF(3/11 Page) Dynex Semiconductor – Powerline N-Channel Single Switch IGBT Module Advance Information

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GP1600FSS12 Datasheet, PDF (3/11 Pages) Dynex Semiconductor – Powerline N-Channel Single Switch IGBT Module Advance Information

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ELECTRICAL CHARACTERISTICS

Tcase = 25ËC unless stated otherwise.

Symbol

Parameter

ICES Collector cut-off current

GES

GE(TH)

Gate leakage current

Gate threshold voltage

Collector-emitter saturation voltage

CE(SAT)

Diode forward current

IFM Diode maximum forward current

Diode forward voltage

Cies Input capacitance

Module inductance

GP1600FSS12

Conditions

Min. Typ. Max. Units

VGE = 0V, VCE = VCES

VGE = 0V, VCE = VCES, Tcase = 125ËC -

Â±20V,

IC = 120mA, VGE = VCE

VGE = 15V, IC =1600A

VGE = 15V, IC = 1600A, Tcase = 125ËC

2 mA

75 mA

ÂµA

7.5 V

2.7 3.5 V

3.2 4.0 V

- 1600 A

tp = 1ms

- 3200 A

IF =1600A

- 2.2 2.4 V

IF =1600A, Tcase = 125ËC

- 2.3 2.5 V

VCE = 25V, VGE = 0V, f = 1MHz

180

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

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