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| GP1600FSS12 Datasheet, PDF (2/11 Pages) Dynex Semiconductor – Powerline N-Channel Single Switch IGBT Module Advance Information | |||
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GP1600FSS12
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In
extreme conditions, as with all semiconductors, this may inlcude potentially hazardous rupture of the package.
Appropriate safety precautions should always be followed.
Tcase = 25ËC unless stated otherwise.
Symbol
Parameter
Test Conditions
VCES
VGES
IC
IC(PK)
Pmax
V
isol
Collector-emitter voltage
VGE = 0V
Gate-emitter voltage
-
Collector current
Maximum power dissipation
Isolation voltage
DC, Tcase = 25ËC
DC, Tcase = 75ËC
1ms, T = 75ËC
case
Tcase = 25ËC (Transistor)
Commoned terminals to base plate.
AC RMS, 1 min, 50Hz
Max.
1200
±20
2100
1600
3200
11400
2500
Units
V
V
A
A
A
W
V
THERMAL AND MECHANICAL RATINGS
Symbol
Parameter
R
th(j-c)
Rth(j-c)
Rth(c-h)
Thermal resistance - transistor
Thermal resistance - diode
Thermal resistance - Case to heatsink
(per module)
T
j
Junction temperature
Tstg
Storage temperature range
-
Screw torque
Conditions
DC junction to case
DC junction to case
Mounting torque 5Nm
(with mounting grease)
Transistor
Diode
-
Mounting - M6
Electrical connections - M4
Electrical connections - M8
Min. Max. Units
-
11 oC/kW
-
-
20 oC/kW
-
8 oC/kW
-
150 oC
-
125 oC
â40 125 oC
-
5 Nm
-
2 Nm
-
10 Nm
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
2/11
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