GP1600FSS12 Datasheet, PDF (6/11 Pages) Dynex Semiconductor – Powerline N-Channel Single Switch IGBT Module Advance Information

GP1600FSS12
CURVES
3200
2800
Common emitter
T_case = 25˚C
V_ge = 20/15/12/10V
2400
2000
1600
1200
800
400
0
0
1.0
2.0
3.0
4.0
5.0
Collector-emitter voltage, V_ce - (V)
Fig.5 Typical output characteristics
3200
2800
Common emitter
T_case = 125˚C
V_ge = 20/15/12/10V
2400
2000
1600
1200
800
400
0
0
1.0
2.0
3.0
4.0
5.0
Collector-emitter voltage, V_ce - (V)
Fig.6 Typical output characteristics
400
Conditions:
T_case = 25˚C,
350 _{VCE = 600V,}
V_GE = 15V
A
300
250
200
B
150
C
100
50
A : R_g = 7Ω
B : R_g = 4.7Ω
C : R_g = 3.3Ω
0
0 200 400 600 800 1000 1200 1400 1600
Collector current, I_C - (A)
Fig.7 Typical turn-on energy vs collector current
450
Conditions:
400
T_case = 125˚C,
V_CE = 600V,
A
V_GE = 15V
350
300
B
250
C
200
150
100
50
0
0
A : R_g = 7Ω
B : R_g = 4.7Ω
C : R_g = 3.3Ω
200 400 600 800 1000 1200 1400 1600
Collector current, I_C - (A)
Fig.8 Typical turn-on energy vs collector current
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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