GP401LSS18 Datasheet, PDF (7/11 Pages) Dynex Semiconductor – Powerline N-Channel Single Switch Low Loss IGBT Module Preliminary Information

GP401LSS18
200
T_case = 25˚C
A
V_GE = ±15V
175 _{VCE = 900V}
B
150
C
125
100
75
50
25
A: R_g = 13Ω
B: R_g = 6.8Ω
C: R_g = 4.3Ω
0
0 50 100 150 200 250 300 350 400
Collector current, I_C - (A)
Fig.9 Typical turn-off energy vs collector current
250
T_case = 125˚C
225 ^VGE ^{= ±15V}
A
V_CE = 900V
200
B
C
175
150
125
100
75
50
A: R_g = 13Ω
25
B: R_g = 6.8Ω
C: R_g = 4.3Ω
0
0 50 100 150 200 250 300 350 400
Collector current, I_C - (A)
Fig.10 Typical turn-off energy vs collector current
60
V_GE = ±15V
V_CE = 900V
50 ^{Rg = 4.3Ω}
40
30
20
T_case = 125˚C
T_case = 25˚C
1200
1000
800
600
400
t_d(off)
t_d(on)
t_f
T_case = 125˚C
V_GE = ±15V
V_CE = 900V
R_g = 4.3Ω
10
200
t_r
0
0 50 100 150 200 250 300 350 400
Collector current, I_T - (A)
Fig.11 Typical diode reverse recovery charge vs collector current
0
0 50 100 150 200 250 300 350 400
Collector current, I_C - (A)
Fig.12 Typical switching characteristics
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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