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| GP401LSS18 Datasheet, PDF (2/11 Pages) Dynex Semiconductor – Powerline N-Channel Single Switch Low Loss IGBT Module Preliminary Information | |||
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GP401LSS18
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections
of this specification is not implied. Exposure to Absolute Maximum Ratings for extended periods may affect device reliability.
Tcase = 25ËC unless stated otherwise.
Symbol
Parameter
V
CES
VGES
IC
IC(PK)
Collector-emitter voltage
Gate-emitter voltage
Continuous collector current
Peak collector current
Pmax
Max. power dissipation
Visol
Isolation voltage
Test Conditions
VGE = 0V
-
DC, T = 25ËC
case
DC, Tcase = 70ËC
1ms, Tcase = 80ËC (Transistor)
Tcase = 25ËC (Transistor)
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
Max. Units
1800 V
±20 V
600 A
400 A
800 A
2980 W
4000 V
THERMAL AND MECHANICAL RATINGS
Symbol
Parameter
Test Conditions
Rth(j-c)
R
th(j-c)
Rth(c-h)
Thermal resistance - transistor (per arm)
DC junction to case
Thermal resistance - diode (per arm)
DC junction to case
Thermal resistance - case to heatsink (per module) Mounting torque 5Nm
(with mounting grease)
Tj
Junction temperature
Transistor
Diode
Tstg
Storage temperature range
-
Screw torque
-
Mounting - M6
Electrical connections - M4
Min. Max. Units
-
42 ËC/kW
-
80 ËC/kW
-
15 ËC/kW
-
125 ËC
-
125 ËC
â40 125 ËC
-
5
Nm
-
2
Nm
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
2/11
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