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| GP401LSS18 Datasheet, PDF (4/11 Pages) Dynex Semiconductor – Powerline N-Channel Single Switch Low Loss IGBT Module Preliminary Information | |||
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GP401LSS18
ELECTRICAL CHARACTERISTICS
For definition of switching waveforms, refer to figure 3 and 4.
Tcase = 25ËC unless stated otherwise.
Symbol
Parameter
Test Conditions
td(off)
Turn-off delay time
t
Fall time
f
EOFF
Turn-off energy loss
td(on)
Turn-on delay time
tr
Rise time
EON
Turn-on energy loss
Q
Diode reverse recovery charge
rr
IC = 400A
VGE = ±15V
VCE = 900V
RG(ON) = RG(OFF) = 4.3â¦
L ~ 100nH
IF = 400A, VR = 50% VCES,
dIF/dt = 2500A/µs
T = 25ËC unless stated otherwise.
case
Symbol
Parameter
td(off)
Turn-off delay time
tf
Fall time
EOFF
Turn-off energy loss
t
Turn-on delay time
d(on)
tr
Rise time
EON
Turn-on energy loss
Qrr
Diode reverse recovery charge
Test Conditions
IC = 400A
VGE = ±15V
VCE = 900V
RG(ON) = RG(OFF) = 4.3â¦
L ~ 100nH
IF = 400A, VR = 50% VCES,
dIF/dt = 2500A/µs
Min. Typ. Max. Units
-
900 1100 ns
-
280 350 ns
-
150 200 mJ
-
500 650 ns
-
200 400 ns
-
140 180 mJ
-
65
85 µC
Min. Typ. Max. Units
-
1010 1200 ns
-
390 500 ns
-
180 230 mJ
-
660 800 ns
-
310 400 ns
-
210 260 mJ
-
90
115 µC
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
4/11
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