GP401LSS18 Datasheet, PDF (6/11 Pages) Dynex Semiconductor – Powerline N-Channel Single Switch Low Loss IGBT Module Preliminary Information

GP401LSS18
TYPICAL CHARACTERISTICS
800
Common emitter
T_case = 25˚C
700
V_ge = 20/15/12/10V
600
500
400
300
200
100
0
0
1.0
2.0
3.0
4.0
5.0
Collector-emitter voltage, V_ce - (V)
Fig.5 Typical output characteristics
800
Common emitter
T_case = 125˚C
700
V_ge = 20/15/12/10V
600
500
400
300
200
100
0
0
1.0
2.0
3.0
4.0
5.0
6.0
Collector-emitter voltage, V_ce - (V)
Fig.6 Typical output characteristics
400
T_case = 25˚C
V_GE = ±15V
350 V_CE = 900V
300
250
200
150
100
50
0
0
A
B
C
A: R_g = 13Ω
B: R_g = 6.8Ω
C: R_g = 4.3Ω
50 100 150 200 250 300 350 400
Collector current, I_C - (A)
Fig.7 Typical turn-on energy vs collector current
500
T_case = 125˚C
450 ^{VGE = ±15V}
V_CE = 900V
400
350
300
A
250
B
200
C
150
100
50
0
0
A: R_g = 13Ω
B: R_g = 6.8Ω
C: R_g = 4.3Ω
50 100 150 200 250 300 350 400
Collector current, I_C - (A)
Fig.8 Typical turn-on energy vs collector current
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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