GP400LSS12 Datasheet, PDF (7/10 Pages) Dynex Semiconductor – Single Switch IGBT Module

GP400LSS12
10000
1000 ^{IC max. (single pulse)}
100
10
100
10
t_p = 50µs
t_p = 100µs
1
t_p = 1ms
Diode
Transistor
1
1
10
100
1000
10000
Collector-emitter voltage, V_ce - (V)
Fig. 11 Forward bias safe operating area
0.1
1
10
100
1000
Pulse width, t_p - (ms)
10000
Fig. 12 Transient thermal impedance
1000
900
800
PWM Sine Wave.
Power Factor = 0.9,
Modulation Index = 1
700
600
500
400
300
200
Conditions:
100 T_j = 125°C, T_c = 75°C,
R_g = 3.3Ω, V_CC = 600V
0
1
10
50
f_max - (kHz)
Fig. 13 3 Phase inverter operating frequency
700
600
500
400
300
200
100
0
0
20 40 60 80 100 120 140 160
Case temperature, T_case - (˚C)
Fig. 14 DC current rating vs case temperature
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
7/10
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