GP400LSS12 Datasheet, PDF (5/10 Pages) Dynex Semiconductor – Single Switch IGBT Module

GP400LSS12
TYPICAL CHARACTERISTICS
800
Common emitter
T_case = 25˚C
700
V_ge = 20/15/12/10V
600
500
400
300
200
100
0
0
1.0
2.0
3.0
4.0
5.0
Collector-emitter voltage, V_ce - (V)
Fig. 3 Typical output characteristics
800
Common emitter
T_case = 125˚C
700
V_ge = 20/15/12/10V
600
500
400
300
200
100
0
0
1.0
2.0
3.0
4.0
5.0
Collector-emitter voltage, V_ce - (V)
Fig. 4 Typical output characteristics
80
Conditions:
T_case = 125˚C,
70 V_CE = 600V,
A
V_GE = ±15V
B
60
C
50
40
30
20
10
0
50
A : R_g = 6.2Ω
B : R_g = 4.7Ω
C : R_g = 3.3Ω
100 150 200 250 300 350 400 450
Collector current, I_C - (A)
Fig. 5 Typical turn-on energy vs collector current
90
Conditions:
80
T_case = 125˚C,
V_CE = 600V,
V_GE = ±15V
70
AB
C
60
50
40
30
20
A : R_g = 6.2Ω
10
B : R_g = 4.7Ω
C : R_g = 3.3Ω
0
0 50 100 150 200 250 300 350 400
Collector current, I_C - (A)
Fig. 6 Typical turn-off energy vs collector current
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
5/10
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