GP400LSS12 Datasheet, PDF (6/10 Pages) Dynex Semiconductor – Single Switch IGBT Module

GP400LSS12
40
Conditions:
V_CE = 600V,
35 V_GE = 15V,
R_g = 4.7Ω
30
25
T_case = 125˚C
20
T_case = 25˚C
15
10
5
0
0
100
200
300
400
Collector current, I_C (A)
Fig. 7 Typical diode turn-off energy vs collector current
1000
900
800
t_d(off)
700
t_d(on)
600
500
400
300
Conditions:
T_case = 125˚C,
V_CE = 600V
V_GE = 15V
R_g = 3.3Ω
200
100
0
0
t_f
t_r
50 100 150 200 250 300 350 400
Collector currrent, I_C - (A)
Fig.8 Typical switching characteristics
800
700
600
T_j = 25˚C
T_j = 125˚C
500
400
300
200
100
0
0
0.5
1
1.5
2
2.5
3
3.5
Forward voltage, V_F - (V)
Fig. 9 Diode typical forward characteristics
1000
900
800
700
600
500
400
300
200 _{Tcase = 125˚C}
V_ge = ±15V
100 R_g = 4.7Ω*
*Recommended minimum value
0
0
200
400
600
800 1000
Collector-emitter voltage, V_ce - (V)
1200
Fig. 10 Reverse bias safe operating area
6/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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