GP400LSS12 Datasheet, PDF (4/10 Pages) Dynex Semiconductor – Single Switch IGBT Module

GP400LSS12
ELECTRICAL CHARACTERISTICS
T = 25˚C unless stated otherwise
case
Symbol
Parameter
t_d(off)
Turn-off delay time
t_f
Fall time
E
Turn-off energy loss
OFF
t_d(on)
Turn-on delay time
t_r
Rise time
E_ON
Turn-on energy loss
Q
Diode reverse recovery charge
rr
T_case = 125˚C unless stated otherwise
Symbol
Parameter
t_d(off)
Turn-off delay time
t_f
Fall time
E
Turn-off energy loss
OFF
t_d(on)
Turn-on delay time
t_r
Rise time
E_ON
Turn-on energy loss
Q_rr
Diode reverse recovery charge
Test Conditions
I = 400A
C
V_GE = ±15V
V_CE = 600V
R_G(ON) = R_G(OFF) = 3.3Ω
L ~ 100nH
I_F = 400A, V_R = 50% V_CES,
dI_F/dt = 2000A/µs
Min. Typ. Max. Units
-
700 850 ns
-
120 160 ns
-
60
80 mJ
-
600 750 ns
-
150 200 ns
-
35
75 mJ
-
30
40 µC
Test Conditions
I = 400A
C
V_GE = ±15V
V_CE = 600V
R_G(ON) = R_G(OFF) = 3.3Ω
L ~ 100nH
I_F = 400A, V_R = 50% V_CES,
dI_F/dt = 2000A/µs-1
Min. Typ. Max. Units
-
900 1100 ns
-
200 250 ns
-
85
100 mJ
-
700 850 ns
-
180 230 ns
-
55
80 mJ
-
55
70 µC
4/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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