GP400LSS18 Datasheet, PDF (6/11 Pages) Dynex Semiconductor – Single Switch IGBT Module

GP400LSS18
150
T_case = 25˚C
V_GE = ±15V
V_CE = 900V
125
100
75
240
T_case = 125˚C
A
V_GE = ±15V
V_CE = 900V
B
200
C
160
A
B
120
C
50
80
25
A: R_g = 13Ω
B: R_g = 6.8Ω
C: R_g = 4.7Ω
0
0 50 100 150 200 250 300 350 400
Collector current, I_C - (A)
Fig.7 Typical turn-off energy vs collector current
40
A: R_g = 13Ω
B: R_g = 6.8Ω
C: R_g = 4.7Ω
0
0 50 100 150 200 250 300 350 400
Collector current, I_C - (A)
Fig.8 Typical turn-off energy vs collector current
75
70 ^{VGE = ±15V}
V_CE = 900V
65
T_case = 125˚C
60
55
50
45
40
T_case = 25˚C
35
30
25
20
15
10
5
0
50 100 150 200 250 300 350 400
Collector current, I_T - (A)
Fig.9 Typical diode reverse recovery charge vs collector current
2500
2000
t_f
T_case = 125˚C
V_GE = ±15V
V_CE = 800V
R_g = 4.7Ω
1500
t_d(off)
1000
500
t_d(on)
t_r
0
0 50 100 150 200 250 300 350 400
Collector current, I_C - (A)
Fig.10 Typical switching characteristics
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Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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