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| GP400LSS18 Datasheet, PDF (2/11 Pages) Dynex Semiconductor – Single Switch IGBT Module | |||
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GP400LSS18
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
T = 25ËC unless stated otherwise
case
Symbol
Parameter
VCES
VGES
IC
I
C(PK)
Pmax
Visol
Collector-emitter voltage
Gate-emitter voltage
Continuous collector current
Peak collector current
Max. power dissipation
Isolation voltage
Test Conditions
VGE = 0V
-
DC, Tcase = 75ËC
1ms, Tcase = 80ËC
Tcase = 25ËC (Transistor), Tj = 150ËC
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
Max. Units
1800 V
±20 V
400 A
800 A
2980 W
4000 V
THERMAL AND MECHANICAL RATINGS
Symbol
Parameter
Test Conditions
R
th(j-c)
Rth(j-c)
Rth(c-h)
Thermal resistance - transistor
DC junction to case
Thermal resistance - diode
DC junction to case
Thermal resistance - case to heatsink (per module) Mounting torque 5Nm
(with mounting grease)
Tj
Junction temperature
Transistor
Diode
T
Storage temperature range
stg
-
Screw torque
-
Mounting - M6
Electrical connections - M4
Min. Max. Units
-
40 ËC/kW
-
70 ËC/kW
-
15 ËC/kW
-
150 ËC
-
125 ËC
â40 125 ËC
-
5
Nm
-
2
Nm
2/11
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
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