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| GP400LSS18 Datasheet, PDF (4/11 Pages) Dynex Semiconductor – Single Switch IGBT Module | |||
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GP400LSS18
ELECTRICAL CHARACTERISTICS
Tcase = 25ËC unless stated otherwise.
Symbol
Parameter
td(off)
Turn-off delay time
t
Fall time
f
EOFF
Turn-off energy loss
td(on)
Turn-on delay time
tr
Rise time
EON
Turn-on energy loss
Qrr
Diode reverse recovery charge
T = 25ËC unless stated otherwise.
case
Symbol
Parameter
td(off)
Turn-off delay time
tf
Fall time
E
Turn-off energy loss
OFF
td(on)
Turn-on delay time
tr
Rise time
E
Turn-on energy loss
ON
Qrr
Diode reverse recovery charge
Test Conditions
IC = 400A
VGE = ±15V
VCE = 900V
R
G(ON)
=
R
G(OFF)
=
4.7â¦
L ~ 100nH
IF = 400A, VR = 900V,
dIF/dt = 2500A/µs
Min. Typ. Max. Units
-
800 900 ns
-
100 130 ns
-
100 130 mJ
-
650 750 ns
-
200 300 ns
-
100 150 mJ
-
80
100 µC
Test Conditions
I = 400A
C
VGE = ±15V
VCE = 900V
RG(ON) = RG(OFF) = 4.7â¦
L ~ 100nH
IF = 400A, VR = 900V,
dI /dt
F
=
2500A/µs
Min. Typ. Max. Units
-
900 1100 ns
-
150 200 ns
-
120 150 mJ
-
900 1100 ns
-
250 300 ns
-
170 210 mJ
-
130 160 µC
4/11
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
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