GP400LSS18 Datasheet, PDF (5/11 Pages) Dynex Semiconductor – Single Switch IGBT Module

GP400LSS18
TYPICAL CHARACTERISTICS
800
Common emitter
T_case = 25˚C
700
V_ge = 20/15/12V
600
V_ge = 10V
500
400
300
200
100
0
0
1.0 2.0 3.0 4.0 5.0 6.0 7.0
Collector-emitter voltage, V_ce - (V)
Fig.3 Typical output characteristics
800
Common emitter
T_case = 125˚C
700
V_ge = 20/15/12V
600
V_ge = 10V
500
400
300
200
100
0
0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0
Collector-emitter voltage, V_ce - (V)
Fig.4 Typical output characteristics
350
T_case = 25˚C
V_GE = ±15V
300 ^VCE ^{= 900V}
250
200
A
150
100
50
0
0
B
C
A: R_g = 13Ω
B: R_g = 6.8Ω
C: R_g = 4.7Ω
50 100 150 200 250 300 350 400
Collector current, I_C - (A)
Fig.5 Typical turn-on energy vs collector current
350
T_case = 125˚C
V_GE = ±15V
300 ^{VCE = 900V}
A
250
200
B
150
C
100
50
A: R_g = 13Ω
B: R_g = 6.8Ω
C: R_g = 4.7Ω
0
0 50 100 150 200 250 300 350 400
Collector current, I_C - (A)
Fig.6 Typical turn-on energy vs collector current
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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