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| MA9264 Datasheet, PDF (5/15 Pages) Dynex Semiconductor – Radiation Hard 8192x8 Bit Static RAM | |||
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Symbol Parameter
Conditions
Min.
Typ.
Max. Units
CIN
C
OUT
Input Capacitance
Output Capacitance
Vl = 0V
V = 0V
I/O
-
3
5
pF
-
5
7
pF
Note: TA = 25°C and f = 1MHz. Data obtained by characterisation or analysis; not routinely measured.
Figure 8: Capacitance
Symbol
FT
Parameter
Basic Functionality
Conditions
VDD = 4.5V - 5.5V, FREQ = 1MHz
VIL = VSS, VIH = VDD, VOL ⤠1.5V, VOH ⥠1.5V
TEMP = -55°C to +125°C, GPS PATTERN SET
GROUP A SUBGROUPS 7, 8A, 8B
Figure 9: Functionality
Subgroup
1
2
3
7
8A
8B
9
10
11
Definition
Static characteristics specified in Tables 4 and 5 at +25°C
Static characteristics specified in Tables 4 and 5 at +125°C
Static characteristics specified in Tables 4 and 5 at -55°C
Functional characteristics specified in Table 9 at +25°C
Functional characteristics specified in Table 9 at +125°C
Functional characteristics specified in Table 9 at -55°C
Switching characteristics specified in Tables 6 and 7 at +25°C
Switching characteristics specified in Tables 6 and 7 at +125°C
Switching characteristics specified in Tables 6 and 7 at -55°C
Figure 10: Definition of Subgroups
MA9264
5/15
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