MA9264 Datasheet, PDF (4/15 Pages) Dynex Semiconductor – Radiation Hard 8192x8 Bit Static RAM

MA9264
AC CHARACTERISTICS
Conditions of Test for Tables 5 and 6:
1. Input pulse = V_SS to 3.0V (TTL) and V_SS to 4.0V (CMOS).
2. Times measurement reference level = 1.5V.
3. Input Rise and Fall times ≤5ns.
4. Output load 1TTL gate and CL = 60pF.
5. Transition is measured at ±500mV from steady state.
6. This parameter is sampled and not 100% tested.
Notes for Tables 6 and 7:
Characteristics
apply
to
pre-radiation
at
T
A
=
-55°C
to
+125°C
with
V
DD
=
5V±10%
and
to
post
100k
Rad(Si)
total
dose
radiation
at T_A = 25°C with V_DD = 5V ±10%. GROUP A SUBGROUPS 9, 10, 11.
Symbol
Parameter
MAX9264X70 MAX9264X95
Min Max Min Max Units
T
AVAVR
T_AVQV
T_EHQV
T_SLQV
T (5,6)
EHQX
T_SLQX (5,6)
T_ELQZ (5,6)
T_SHQZ (5,6)
T
AXQX
T_GLQV
T_GLQX (5,6)
T (5,6)
GHQZ
Read Cycle Time
Address Access Time
Chip Select Access Time
Chip Enable Access Time
Chip Selection to Output in Low Z
Chip Enable to Output in Low Z
Chip Deselection to Output in High Z
Chip Disable to Output in High Z
Output Hold from Address Change
Output Enable Access Time
Output Enable to Output in Low Z
Output Enable to Output in High Z
70 - 95 -
ns
- 65 - 90 ns
- 70 - 95 ns
- 70 - 95 ns
15 - 15 -
ns
15 - 15 -
ns
0 20 0 20 ns
0 20 0 20 ns
30 - 40 -
ns
- 25 - 30 ns
15 - 15 -
ns
0 20 0 20 ns
Figure 6: Read Cycle AC Electrical Characteristics
Symbol
T
AVAVW
T_EHWH
T_SLWH
T_AVWH
T_AVWL
T
WLWH
T_WHAV
T_WLQZ (5,6)
T_DVWH
T
WHDX
T_WHQX (5,6)
Parameter
Write Cycle Tlme
Chip Selection to End of Write
Chip Enable to End of Write
Address Valid to End of Write
Address Set Up Time
Write Pulse Width
Write Recovery Time
Wnte to Output in High Z
Data to Write Time Overlap
Data Hold from Write
Output Active from End to Write
MAX9264X70 MAX9264X95
Min Max Min Max Units
55 - 60 -
ns
50 - 60 -
ns
50 - 60 -
ns
50 - 55 -
ns
0
-
0
-
ns
40 - 45 -
ns
0
-
0
-
ns
0 20 0 20 ns
25 - 30 -
ns
0
-
0
-
ns
0 20 0 20 ns
Figure 7: Write Cycle AC Electrical Characteristics
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