MA9264 Datasheet, PDF (1/15 Pages) Dynex Semiconductor – Radiation Hard 8192x8 Bit Static RAM

Replaces June 1999 version, DS3692-6.0
MA^M9^A2⁹²6⁶4⁴
Radiation Hard 8192x8 Bit Static RAM
DS3692-7.0 January 2000
The MA9264 64k Static RAM is configured as 8192x8 bits and
manufactured using CMOS-SOS high performance, radiation hard,
1.5µm technology.
The design uses a 6 transistor cell and has full static operation with
no clock or timing strobe required. Address input buffers are deselected
when chip select is in the HIGH state.
See Application Note “Overview of the Dynex Semiconductor
Radiation Hard 1.5µm CMOS/SOS SRAM Range”.
Operation Mode CS CE OE WE I/O Power
Read
L H L H D OUT
Write
L H X L D IN ISB1
Output Disable L H H H High Z
Standby
H X X X High Z
X L XX
X
ISB2
FEATURES
s 1.5µm CMOS-SOS Technology
s Latch-up Free
s Fast Access Time 70ns Typical
s Total Dose 10⁶ Rad(Si)
s Transient Upset >10¹¹ Rad(Si)/sec
s SEU 4.3 x 10^-11 Errors/bitday
s Single 5V Supply
s Three State Output
s Low Standby Current 100µA Typical
s -55°C to +125°C Operation
s All Inputs and Outputs Fully TTL or CMOS
Compatible
s Fully Static Operation
Figure 1: Truth Table
A12
A
D
R
A9
D
O
A8
R
W
E
A4
S
S
D
A3
E
B
C
A6
U
O
F
D
A5
F
E
E
R
A7
R
CS
CE
WE
OE
A10 A0 A1 A2 A11
Figure 2: Block Diagram
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