GP800DDM12 Datasheet, PDF (5/11 Pages) Dynex Semiconductor – Hi-Reliability Dual Switch IGBT Module Advance Information

GP800DDM12
TYPICAL CHARACTERISTICS
1600
1400
Common emitter
T_case = 25˚C
V_ge = 20/15/12/10V
1200
1000
800
600
400
200
0
0
1.0
2.0
3.0
4.0
5.0
Collector-emitter voltage, V_ce - (V)
Fig. 3 Typical output characteristics
1600
1400
Common emitter
T_case = 125˚C
V_ge = 20/15/12/10V
1200
1000
800
600
400
200
0
0
1.0
2.0
3.0
4.0
5.0
Collector-emitter voltage, V_ce - (V)
Fig. 4 Typical output characteristics
160
Conditions:
T_case = 25˚C,
140 V_CE = 600V,
A
V_GE = ±15V
120
B
100
80
C
60
40
20
A : R_g = 6.8Ω
B : R_g = 4.7Ω
C : R_g = 3.3Ω
0
0 100 200 300 400 500 600 700 800
Collector current, I_C - (A)
Fig. 5 Typical turn-on energy vs collector current
220
Conditions:
200 ^Tcase ^{= 125˚C,}
V_CE = 600V,
A
180 ^VGE ^{= ±15V}
160
B
140
C
120
100
80
60
40
A : R_g = 6.8Ω
20
B : R_g = 4.7Ω
C : R_g = 3.3Ω
0
0 100 200 300 400 500 600 700 800
Collector current, I_C - (A)
Fig. 6 Typical turn-off energy vs collector current
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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