GP800DDM12 Datasheet, PDF (1/11 Pages) Dynex Semiconductor – Hi-Reliability Dual Switch IGBT Module Advance Information

GP800DDM12
Replaces May 2000 version, DS5291-1.3
FEATURES
s High Thermal Cycling Capability
s 800A Per Switch
s Non Punch Through Silicon
s Isolated MMC Base with AlN Substrates
GP800DDM12
Hi-Reliability Dual Switch IGBT Module
Advance Information
DS5291-2.0 October 2000
KEY PARAMETERS
V_CES
V_CE(sat)
I_C
I_C(PK)
(typ)
(max)
(max)
1200V
2.7V
800A
1600A
APPLICATIONS
s High Reliability Inverters
s Motor Controllers
s Traction Drives
s Resonant Converters
The Powerline range of high power modules includes dual
and single switch configurations covering voltages from 1200V to
3300V and currents up to 4800A.
The GP800DDM12 is a dual switch 1200V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) ensuring reliability in demanding applications. This
device is optimised for traction drives and other applications
requiring high thermal cycling capability or very high reliability.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.
ORDERING INFORMATION
Order As:
GP800DDM12
Note: When ordering, please use the whole part number.
12(C²)
2(C₂)
7(C¹)
4(E₂)
1(E₁)
11(G²)
10(E²)
3(C₁)
5(E¹)
6(G¹)
Fig. 1 Dual switch circuit diagram
5
6
3
1
7
8
9
12
4
2
11
10
Outline type code: D
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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