GP800DDM12 Datasheet, PDF (4/11 Pages) Dynex Semiconductor – Hi-Reliability Dual Switch IGBT Module Advance Information

GP800DDM12
ELECTRICAL CHARACTERISTICS
T_case = 25˚C unless stated otherwise
Symbol
Parameter
t_d(off)
Turn-off delay time
t
Fall time
f
E_OFF
Turn-off energy loss
t_d(on)
Turn-on delay time
t_r
Rise time
E
Turn-on energy loss
ON
Q_rr
Diode reverse recovery charge
T_case = 125˚C unless stated otherwise
Symbol
Parameter
t_d(off)
Turn-off delay time
t_f
Fall time
E_OFF
Turn-off energy loss
t_d(on)
Turn-on delay time
t_r
Rise time
E_ON
Turn-on energy loss
Q_rr
Diode reverse recovery charge
Test Conditions
I_C = 800A
V_GE = ±15V
V_CE = 600V
R
G(ON)
=
R
G(OFF)
=
3.3Ω
L ~ 100nH
I_F = 800A, V_R = 50% V_CES,
dI_F/dt = 2000A/µs^-1
Min. Typ. Max. Units
-
1100 1300 ns
-
150 200 ns
-
130 170 mJ
-
800 900 ns
-
320 400 ns
-
90 130 mJ
-
150 200 µC
Test Conditions
I_C = 800A
V_GE = ±15V
V_CE = 600V
R
G(ON)
=
R
G(OFF)
=
3.3Ω
L ~ 100nH
I_F = 800A, V_R = 50% V_CES,
dI_F/dt = 2000A/µs^-1
Min. Typ. Max. Units
-
1300 1500 ns
-
200 250 ns
-
170 250 mJ
-
950 1200 ns
-
350 450 ns
-
150 200 mJ
-
200 260 µC
4/11
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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