GP800DDM12 Datasheet, PDF (3/11 Pages) Dynex Semiconductor – Hi-Reliability Dual Switch IGBT Module Advance Information

GP800DDM12
ELECTRICAL CHARACTERISTICS
T_case = 25˚C unless stated otherwise.
Symbol
Parameter
I_CES
Collector cut-off current
I_GES
V
GE(TH)
V_CE(sat)
Gate leakage current
Gate threshold voltage
Collector-emitter saturation voltage
I_F
Diode forward current
I
Diode maximum forward current
FM
V_F
Diode forward voltage
C
Input capacitance
ies
L_M
Module inductance
Test Conditions
V_GE = 0V, V_CE = V_CES
V = 0V, V = V , T = 125˚C
GE
CE
CES case
V_GE = ±20V, V_CE = 0V
I_C = 120mA, V_GE = V_CE
V_GE = 15V, I_C = 800A
V = 15V, I = 800A, , T = 125˚C
GE
C
case
DC, T_case = 50˚C
t_p = 1ms
I_F = 800A
I_F = 800A, T_case = 125˚C
V = 25V, V = 0V, f = 1MHz
CE
GE
-
Min. Typ. Max. Units
-
-
1
mA
-
-
50 mA
-
-
±4 µA
4
-
7.5
V
-
2.7
3.5
V
-
3.2
4
V
-
-
800 A
-
-
1600 A
-
2.2
2.4
V
-
2.3
2.5
V
-
90
-
nF
-
20
-
nH
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
3/11
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