MA5114 Datasheet, PDF (3/12 Pages) Dynex Semiconductor – Radiation hard 1024x4 Bit Static RAM

MA5114
AC CHARACTERISTICS
Conditions of Test for Tables 5 and 6:
1. Input pulse = V_SS to 3.0V.
2. Times measurement reference level = 1.5V.
3. Transition is measured at ±500mV from steady state.
4. This parameter is sampled and not 100% tested.
Notes for Tables 6 and 7:
Characteristics
apply
to
pre-radiation
at
T
A
=
-55°C
to
+125°C
with
V
DD
=
5V±10%
and
to
post
100k
Rad(Si)
total
dose
radiation
at
T
A
=
25°C
with
V
DD
=
5V
±10%.
GROUP
A
SUBGROUPS
9,
10,
11.
Symbol
Parameter
Min Max Units
T_AVAVR
T_AVQV
T
ELQV
T_ELQX (3,4)
T_ELQZ (3,4)
T_AXQX
Read Cycle Time
Address Access Time
Chip Select to Output Valid
Chip Select to Output Active
Chip Select to Output Tri State
Output Hold from Address Change
135 -
ns
- 135 ns
- 135 ns
10 -
ns
10 50
ns
10 -
ns
Figure 6: Read Cycle AC Electrical Characteristics
Symbol
T
AVAVW
T_AVWL
T_WLWH
T_WHAV
T_DVWH
T
NHDX
T_WLQZ (3,4)
T
ELWL
T_ELWH
T_AVWH
T_WHQX (3,4)
Parameter
Write Cycle Tlme
Address Set Up Time
Write Pulse Width
Write Recovery Time
Data Set Up Time
Data Hold Time
Write Enable to Output Tri State
Chip Selection to Write Low
Chip Selection to End of Write
Address Valid to End of Write
Output Active from End to Write
Min Max Units
135 -
ns
10 -
ns
50 -
ns
5
-
ns
35 -
ns
5
-
ns
10 50
ns
25 -
ns
85 -
ns
80 -
ns
5
-
ns
Figure 7: Write Cycle AC Electrical Characteristics
Symbol Parameter
Conditions
Min.
Typ.
Max. Units
C
IN
C_OUT
Input Capacitance
Output Capacitance
V = 0V
l
V_O = 0V
-
6
10
pF
-
8
12
pF
Note: T_A = 25°C and f = 1MHz. Data obtained by characterisation or analysis; not routinely measured.
Figure 8: Capacitance
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