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MA5114 Datasheet, PDF (2/12 Pages) Dynex Semiconductor – Radiation hard 1024x4 Bit Static RAM
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MA5114
CHARACTERISTICS AND RATINGS
Symbol
VCC
VI
TA
TS
Parameter
Supply Voltage
Input Voltage
Operating Temperature
Storage Temperature
Min.
-0.5
-0.3
-55
-65
Max.
7
VDD+0.3
125
150
Units
V
V
°C
°C
Figure 3: Absolute Maximum Ratings
Stresses above those listed may cause permanent
damage to the device. This is a stress rating only and
functlonal operation of the device at these condltions,
or at any other condition above those indicated in the
operations section of this specification, is not Implied
Exposure to absolute maxlmum rating conditions for
extended perlods may affect device reliability.
Notes for Tables 4 and 5:
1. Characteristics apply to pre radiation at TA = -55°C to +125°C with VDD = 5V ±10% and to post 100k Rad(Si) total dose
radiation at TA = 25°C with VDD = 5V ±10% (characteristics at higher radiation levels available on request).
2. Worst case at TA = +125°C, guaranteed but not tested at TA = -55°C.
GROUP A SUBGROUPS 1, 2, 3.
Symbol Parameter
Conditions
Min.
Typ. Max. Units
VDD Supply voltage
-
4.5
5.0
5.5
V
VlH Input High Voltage
-
VDD/2
-
VDD
V
VlL
Input Low Voltage
-
VSS
-
0.8
V
VOH Output High Voltage
IOH1 = -1mA
2.4
-
-
V
VOL Output Low Voltage
IOL = 2mA
-
-
0.4
V
ILI
Input Leakage Current (note 2) All inputs except CS
-
-
±10
µA
ILO
Output Leakage Current (note 2) Output disabled, VOUT = VSS or VDD
-
-
±20
µA
IPUI Input Pull-Up Current
VIN = VSS on CS input only
-
-
-100 µA
IPDI Input Leakage Current
VIN = VSS on CS input only
-
-
5
µA
IDD Power Supply Current
fRC = 1MHz, CS = 50% mark:space-
12
16
mA
ISB1 Selected Supply Current
CS = VSS
-
25
35
mA
ISB2 Standby Supply Current
Chip disabled
-
50
3000 µA
Figure 4: Electrical Characteristics
Symbol Parameter
VDR
VCC for Data Retention
IDDR
Data Retention Current
Conditions
Min.
CS = VDR
2.0
CS = VDR, VDR = 2.0V
-
Figure 5: Data Retention Characteristics
Typ.
-
30
Max.
-
2000
Units
V
µA
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