MA5114 Datasheet, PDF (1/12 Pages) Dynex Semiconductor – Radiation hard 1024x4 Bit Static RAM

MA5114
MA5114
Radiation hard 1024x4 Bit Static RAM
Replaces June 1999 version, DS3591-4.0
DS3591-5.0 January 2000
The MA5114 4k Static RAM is configured as 1024 x 4 bits and
manufactured using CMOS-SOS high performance, radiation hard,
3µm technology.
The design uses a 6 transistor cell and has full static operation with
no clock or timing strobe required. Address input buffers are deselected
when Chip Select is in the HIGH state.
Operation Mode CS WE I/O
Power
Read
Write
Standby
L H D OUT
L L D IN
H X High Z
ISB1
ISB2
Figure 1: Truth Table
FEATURES
s 3µm CMOS-SOS Technology
s Latch-up Free
s Fast Access Time 90ns Typical
s Total Dose 10⁶ Rad(Si)
s Transient Upset >10¹⁰ Rad(Si)/sec
s SEU <10^-10 Errors/bitday
s Single 5V Supply
s Three State Output
s Low Standby Current 50µA Typical
s -55°C to +125°C Operation
s All Inputs and Outputs Fully TTL or CMOS
Compatible
s Fully Static Operation
s Data Retention at 2V Supply
Figure 2: Block Diagram
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