MA28155 Datasheet, PDF (15/20 Pages) Dynex Semiconductor – Radiation Hard Programmable Peripheral Interface

DEFINITION OF SUBGROUPS
Subgroup
Definition
1
Static characteristics specified in Table 5 at +25°C
2
Static characteristics specified in Table 5 at +125°C
3
Static characteristics specified in Table 5 at -55°C
7
Functional characteristics specified at +25°C
8A
Functional characteristics specified at +125°C
8B
Functional characteristics specified at -55°C
9
Switching characteristics specified in Table 6 at +25°C
10
Switching characteristics specified in Table 6 at +125°C
11
Switching characteristics specified in Table 6 at -55°C
MA28155
DC CHARACTERISTICS AND RATINGS
Parameter
Supply Voltage
Input Voltage
Current Through Any Pin
Operating Temperature
Storage Temperature
Min
Max
-0.5
7
-0.3 V_DD+0.3
-20
+20
-55
125
-65
150
Table 4: Absolute Maximum Ratings
Units
V
V
mA
°C
°C
Note: Stresses above those listed may cause permanent
damage to the device. This is a stress rating only and
functional operation of the device at these conditions, or at
any other condition above those indicated in the operations
section of this specification, is not implied. Exposure to
absolute maximum rating conditions for extended periods
may affect device reliability.
Total dose radiation not
exceeding 3x10⁵ Rad(SI)
Symbol
Parameter
Conditions
Min Typ Max Units
V_DD Supply Voltage
V_IH
Input High Voltage
V_IL
Input Low Voltage
V_OH Output High Voltage
V_OL Output Low Voltage
I_IN
Input Leakage Current (Note 1)
I_OZ
Tristate Leakage Current (Note 1)
I_DD
Power Supply Current
-
-
-
I_OH = -6mA
I_OL = 12mA
V_DD = 5.5V,
V_IN = V_SS or V_DD
V_DD = 5.5V,
V_IN = V_SS or V_DD
Static,
4.5
5.0
5.5
V
2.2
-
-
V
-
-
0.8
V
3.5
-
-
V
-
-
0.5
V
-
-
±10 µA
-
-
±50 µA
-
0.1
10
mA
Note 1: Guaranteed but not tested at -55°C
Mil-Std-883, method 5005, subgroups 1, 2, 3.
V_DD = 5V±10%, over full operating temperature range.
Table 5: Electrical Characteristics
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