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| ZXTC6719MC_15 Datasheet, PDF (6/9 Pages) Diodes Incorporated – DUAL 50V NPN & 40V PNP LOW SATURATION TRANSISTOR COMBINATION | |||
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A Product Line of
Diodes Incorporated
ZXTC6719MC
PNP - Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 11)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector Emitter Cutoff Current
Static Forward Current Transfer Ratio
(Note 11)
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
ICES
hFE
Min Typ
-50
-80
-40
-70
-7
-8.5
-
-
-
-
-
-
300 480
300 450
180 290
60
130
12
22
Collector-Emitter Saturation Voltage
(Note 11)
Base-Emitter Turn-On Voltage (Note 11)
Base-Emitter Saturation Voltage (Note 11)
Output Capacitance
Transition Frequency
Turn-on Time
Turn-off Time
VCE(sat)
VBE(on)
VBE(sat)
Cobo
fT
ton
toff
-
-25
-
-150
-
-195
-
-210
-
-260
-
-0.89
-
-0.97
-
19
150 190
-
40
-
435
Notes: 11. Measured under pulsed conditions. Pulse width ⤠300µs. Duty cycle ⤠2%.
Max
-
-
-
-100
-100
-100
-
-
-
-
-
-40
-220
-300
-300
-370
-0.95
-1.05
25
-
-
-
Unit
V
V
V
nA
ï nA
nA
-
mV
V
V
pF
MHz
ns
ns
Test Condition
IC = -100µA
IC = -10mA
IE = -100µA
VCB = -40V
VEB = -6V
VCES = -32V
IC = -10mA, VCE = -2V
IC = -100mA, VCE = -2V
IC = -1A, VCE = -2V
IC = -1.5A, VCE = -2V
IC = -3A, VCE = -2V
IC = -0.1A, IB = -10mA
IC = -1A, IB = -50mA
IC = -1.5A, IB = -100mA
IC = -2A, IB = -200mA
IC = -2.5A, IB = -250mA
IC = -2.5A, VCE = -2V
IC = -2.5A, IB = -250mA
VCB = -10V. f = 1MHz
VCE = -10V, IC = -50mA,
f = 100MHz
VCC = -15V, IC = -0.75A
IB1 = IB2 = -10mA
ZXTC6719MC
Document number: DS31928 Rev. 3 - 2
6 of 9
www.diodes.com
January 2011
© Diodes Incorporated
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