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| ZXTC6719MC_15 Datasheet, PDF (4/9 Pages) Diodes Incorporated – DUAL 50V NPN & 40V PNP LOW SATURATION TRANSISTOR COMBINATION | |||
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A Product Line of
Diodes Incorporated
ZXTC6719MC
NPN - Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 10)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector Emitter Cutoff Current
Static Forward Current Transfer Ratio
(Note 10)
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
ICES
hFE
Min Typ
100 190
50
65
7
8.2
-
-
-
-
-
-
200 400
300 450
200 400
100 225
-
40
Collector-Emitter Saturation Voltage
(Note 10)
Base-Emitter Turn-On Voltage (Note 10)
Base-Emitter Saturation Voltage (Note 10)
Output Capacitance
Transition Frequency
Turn-on Time
Turn-off Time
VCE(sat)
VBE(on)
VBE(sat)
Cobo
fT
ton
toff
-
10
-
145
-
70
-
115
-
225
-
270
-
0.94
-
1.00
-
12
100 165
-
170
-
750
Notes: 10. Measured under pulsed conditions. Pulse width ⤠300µs. Duty cycle ⤠2%
Max
-
-
-
100
100
100
-
-
-
-
-
20
200
100
220
300
320
1.00
1.07
20
-
-
-
Unit
V
V
V
nA
ï nA
nA
-
mV
V
V
pF
MHz
ns
ns
Test Condition
IC = 100µA
IC = 10mA
IE = 100µA
VCB = 80V
VEB = 6V
VCES = 40V
IC = 10mA, VCE = 2V
IC = 200mA, VCE = 2V
IC = 1A, VCE = 2V
IC = 2A, VCE = 2V
IC = 6A, VCE = 2V
IC = 0.1A, IB = 10mA
IC = 1A, IB = 10mA
IC = 1A, IB = 50mA
IC = 2A, IB = 50mA
IC = 3A, IB = 100mA
IC = 4A, IB = 200mA
IC = 4A, VCE = 2V
IC = 4A, IB = 200mA
VCB = 10V. f = 1MHz
VCE = 10V, IC = 50mA,
f = 100MHz
VCC = 10V, IC = 1A
IB1 = IB2 = 10mA
ZXTC6719MC
Document number: DS31928 Rev. 3 - 2
4 of 9
www.diodes.com
January 2011
© Diodes Incorporated
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