ZXTC6719MC_15 Datasheet, PDF (3/9 Pages) Diodes Incorporated – DUAL 50V NPN & 40V PNP LOW SATURATION TRANSISTOR COMBINATION

Thermal Characteristics
A Product Line of
Diodes Incorporated
ZXTC6719MC
10
10
1
DC
V
CE(SAT)
1s
Limited
0.1
100ms
10ms
8sqcm 2oz Cu
One active die
1ms
100us
Single Pulse, T =25°C
amb
0.001.1
1
10
100
V Collector-Emitter Voltage (V)
CE
NPN Safe Operating Area
80 ^{8sqcm 2oz Cu}
One active die
60
D=0.5
40
D=0.2
20
Single Pulse
D=0.05
D=0.1
1000µ 1m 10m 100m 1 10 100 1k
Pulse Width (s)
Transient Thermal Impedance
3.5
T =25°C
3.0
amb
T =150°C
j max
2.5 ^Continuous
2.0
2oz Cu
One active die
1.5
2oz Cu
Two active die
1.0
0.5
01.000m
1oz Cu
1oz Cu
Two active die
One active die
1
10
100
Board Cu Area (sqcm)
Power Dissipation v Board Area
1
DC
V
CE(SAT)
1s
Limited
0.1
100ms
10ms
8sqcm 2oz Cu
1ms
One active die
Single Pulse, T =25°C
amb
100us
0.001.1
1
10
100
-V Collector-Emitter Voltage (V)
CE
PNP Safe Operating Area
2.0
10sqcm 1oz Cu
Two active die
1.5
8sqcm 2oz Cu
One active die
1.0
10sqcm 1oz Cu
One active die
0.5
0.00
25 50 75 100 125 150
Temperature (°C)
Derating Curve
225
200
1oz Cu
175
One active die
1oz Cu
150
Two active die
125
100
75 _{2oz Cu}
50 ^{Once active die}
25
2oz Cu
Two active die
00.1
1
10
100
Board Cu Area (sqcm)
Thermal Resistance v Board Area
ZXTC6719MC
Document number: DS31928 Rev. 3 - 2
3 of 9
www.diodes.com
January 2011
© Diodes Incorporated