ZXTC6719MC_15 Datasheet, PDF (2/9 Pages) Diodes Incorporated – DUAL 50V NPN & 40V PNP LOW SATURATION TRANSISTOR COMBINATION

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Diodes Incorporated
ZXTC6719MC
Maximum Ratings @ T_A = 25°C unless otherwise specified
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Parameter
Continuous Collector Current
Base Current
(Notes 4 & 7)
(Notes 5 & 7)
Symbol
V_CBO
V_CEO
V_EBO
I_CM
I_C
I_B
NPN
PNP
Unit
100
-50
50
-40
V
7
-7
6
-4
4
4.5
-3
-3.5
A
1
Thermal Characteristics @ T_A = 25°C unless otherwise specified
Characteristic
Power Dissipation
Linear Derating Factor
Thermal Resistance, Junction to Ambient
(Notes 4 & 7)
(Notes 5 & 7)
(Notes 6 & 7)
(Notes 6 & 8)
(Notes 4 & 7)
(Notes 5 & 7)
(Notes 6 & 7)
(Notes 6 & 8)
Symbol
P_D
R_θJA
NPN
1.5
12
2.45
19.6
1.13
8
1.7
13.6
83.3
51.0
111
73.5
PNP
Unit
W
mW/°C
°C/W
Thermal Resistance, Junction to Lead
(Notes 7 & 9)
R_θJL
17.1
Operating and Storage Temperature Range
T_J, T_STG
-55 to +150
°C
Notes:
4. For a dual device surface mounted on 28mm x 28mm (8cm²) FR4 PCB with high coverage of single sided 2 oz copper, in still air conditions; the device is
measured when operating in a steady-state condition. The heatsink is split in half with the exposed collector pads connected to each half.
5. Same as note (3), except the device is measured at t <5 sec.
6. Same as note (3), except the device is surface mounted on 31mm x 31mm (10cm²) FR4 PCB with high coverage of single sided 1oz copper.
7. For a dual device with one active die.
8. For dual device with 2 active die running at equal power.
9. Thermal resistance from junction to solder-point (at the end of the collector lead).
ZXTC6719MC
Document number: DS31928 Rev. 3 - 2
2 of 9
www.diodes.com
January 2011
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