AP9050 Datasheet, PDF (3/9 Pages) Diodes Incorporated – PROTECTION INTERFACE for PMICs with INTEGRATED OVP CONTROL

AP9050
PROTECTION INTERFACE for PMICs with
INTEGRATED OVP CONTROL
Absolute Maximum Ratings (Note 2, 3)
Symbol
Parameter
Rating
Unit
V_IN
Supply Voltage
−0.3 to 30
V
V_GS
Gate-to-Source Voltage
±12
V
I_Dpk
Drain Current, Peak (10µs pulse)
19
A
Drain Current, Continuous
(Note 4, Steady-State)
I_D
T_A = 25ºC
3.7
2.7
A
T_A = 85ºC
P_max
Total Power Dissipation @ T_A = 25°C
(Note 3, 4)
750
mW
T_J
Junction Temperature Range
−40 to +125
°C
T_J
Non-operating Temperature Range
−55 to +150
°C
T_L
Maximum Lead Temperature for Soldering
Purposes
260
°C
Semiconductor devices are ESD sensitive and may be damaged by exposure to ESD events. Suitable ESD precautions should be taken when handling and
transporting these devices.
Notes:
2. Exceeding these ratings may damage the device.
3. Mounted on FR4 Board using 30 mm², 2 oz Cu.
4. Dual die operation (equally−heated).
Thermal Resistance
Symbol
Parameter
θ_JA
Junction to Ambient (Note 5)
θ_JC
Junction to Case
Note: 5. Test condition for DFN2020-6: Mounted on FR4 Board using 30 mm², 2 oz Cu.
Rating
132
13
Unit
°C/W
°C/W
Recommended Operating Conditions (Note 6)
Symbol
Parameter
Min
V_IN
Supply Voltage
3
T_A
Operating Ambient Temperature Range
−40
Note: 6. The device function is not guaranteed outside of the recommended operating conditions.
Max
30
+85
Unit
V
°C
AP9050
Document number: DS35283 Rev. 1 - 2
3 of 9
www.diodes.com
March 2011
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