8050 Datasheet, PDF (4/5 Pages) Micro Electronics – NPN EPITAXIAL SILICON PLANAR TRANSISTOR

8050
Collector saturation voltage
versus collector current
DC current gain
versus collector current
V
0.5
0.4
typical
lim its
at Tam b =25^o C
Ic
IB ⁼¹⁰
VCEsat _0.3
1000
VCE=1V
700
500
400
150 ^oC
300
h FE ²⁰⁰
100
Tamb=25^{o C} _{-50 o C}
0.2
0.1
0
10 ^-1
25 ^oC
150 ^oC
-50 ^oC
1
10
10 ²
10³ mA
IC
Base saturation voltage
versus collector current
V
2
VBE sat
typical
lim its
at Tam b=25^o C
Ic
IB ⁼¹⁰
IC
1
-50 ^oC
25^{o C}
150 ^oC
70
50
40
30
20
10
10 ^-1 1
10 10 ² 10³
IC
Common emitter
collector characteristics
mA
500
400
300
200
3.2
2.8
2.4
2
1.8
1.6
1.4
1.2
1
0.8
0.6
100
0.4
0
0
10 ^-1 1
10 10 ² 10³ mA
0
IC
I B=0.2mA
1
2V
VCE