8050 Datasheet, PDF (3/5 Pages) Micro Electronics – NPN EPITAXIAL SILICON PLANAR TRANSISTOR

8050
Admissible power dissipation
versus ambient temperature
Valid provided that leads are kept at
ambient temperature
at a distance of 2 mm from case
W
1
0.8
Ptot 0.6
0.4
0.2
0
0
100
200 ^oC
Tamb
Collector current
versus base emitter voltage
mA
10 ³
5
2
10 ² ₁₅₀ o_C
5
IC
2
10
5
2
1
5
2
10 ^-1
0
25 ^oC
-50 ^oC
typical
limits
at Tamb=25^o C
1
2V
VBE
Pulse thermal resistance
versus pulse duration
Valid provided that leads are kept at
ambient temperature
at a distance of 2 mm from case
K/W
10³
5
2
2
10
0.5
5
r thA
2 ^0.2
0.1
10
0.05
5
0.02
2
1
tp
0.01
5
0.005
v=0
v=tp
T
PI
2
T
10 ^-1
-6
10
10-⁵
-4
10
-3
10
10-²
-1
10
1
10
tp
fT
10² S
Gain bandwidth product
versus collector current
MHz
10 ³
7
5
4
3
2
10 ²
7
5
4
3
2
Tamb=25^oC
f=20MHz
VCE=5V
1V
10
1 2 5 ₁₀ 2
5 10 ² 2 5 10 ³ mA
IC