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| 8050 Datasheet, PDF (2/5 Pages) Micro Electronics – NPN EPITAXIAL SILICON PLANAR TRANSISTOR | |||
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8050
Characteristics at Tamb=25 OC
Symbol
Min.
Typ.
Max.
DC Current Gain
at VCE=1V, IC=100mA
at VCE=1V, IC=350mA
Collector Cutoff Current
ST 8050B
hFE
70
-
120
ST 8050C
hFE
120
-
200
ST 8050D
hFE
160
-
300
ST 8050E
hFE
300
-
380
hFE
60
-
-
at VCB=35V
Collector Saturation Voltage
ICBO
-
-
100
at IC=500mA, IB=50mA
Base Saturation Voltage
VCE(sat)
-
-
0.5
at IC=500mA, IB=50mA
Collector Emitter Breakdown Voltage
VBE(sat)
-
-
1.2
at IC=2mA
Collector Base Breakdown Voltage
V(BR)CEO
25
-
-
at IC=10μA
Emitter Base Breakdown Voltage
V(BR)CBO
40
-
-
at IE=100μA
Gain Bandwidth Product
V(BR)EBO
6
-
-
at VCE=5V, IC=10mA, f=50MHz
Collector Base Capacitance
fT
-
100
-
at VCB=10V, f=1MHz
CCBO
-
12
-
Thermal Resistance Junction to Ambient
RthA
-
-
2001)
1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case
Unit
-
-
-
-
-
nA
V
V
V
V
V
MHz
pF
K/W
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